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| SFH 320 SFH 320 FA NPN-Silizium-Fototransistor im (R) SMT TOPLED -Gehause Silicon NPN Phototransistor in (R) SMT TOPLED -Package SFH 320 SFH 320 FA Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Features q Especially suitable for applications from q q q q Bereich von 380 nm bis 1150 nm (SFH 320) und bei 880 nm (SFH 320 FA) Hohe Linearitat P-LCC-2 Gehause Gruppiert lieferbar fur alle Lotverfahren geeignet q q q q 380 nm to 1150 nm (SFH 320) and of 880 nm (SFH 320 FA) High linearity P-LCC-2 package Available in groups Suitable for all soldering methods Anwendungen q Miniaturlichtschranken fur Gleich- und Applications q q q q Wechsellichtbetrieb q Lochstreifenleser q Industrieelektronik q "Messen/Steuern/Regeln" Semiconductor Group 1 Miniature photointerrupters punched tape readers Industrial electronics For control and drive circuits 01.97 fplf6724 fpl06724 SFH 320 SFH 320 FA Typ Type SFH 320 SFH 320-3 SFH 320-4 Bestellnummer Ordering Code Q62702-P0961 Q62702-P390 Q62702-P1606 Typ (*vorher) Type (*formerly) SFH 320 FA (*SFH 320 F) SFH 320 FA-3 (*SFH 320 F-3) SFH 320 FA-4 (*SFH 320 F-4) Bestellnummer Ordering Code Q62702-P0988 Q62702-P393 Q62702-P1607 Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, < 10 s Collector surge current Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand fur Montage auf PC-Board Thermal resistance for mounting on pcb Symbol Symbol Wert Value - 55 ... + 100 35 15 75 165 450 Einheit Unit C V mA mA mW K/W Top; Tstg VCE IC ICS Ptot RthJA Semiconductor Group 2 SFH 320 SFH 320 FA Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Description Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Symbol Symbol SFH 320 S max 860 Wert Value SFH 320 FA 900 nm Einheit Unit 380 ... 1150 730 ... 1120 nm Bestrahlungsempfindliche Flache ( 240 m) A Radiant sensitive area Abmessung der Chipflache Dimensions of chip area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Kapazitat, VCE = 0 V, f = 1 MHz, E = 0 Capacitance Dunkelstrom Dark current VCE = 25 V, E = 0 0.045 0.45 x 0.45 0.5 ... 0.7 0.045 0.45 x 0.45 0.5 ... 0.7 mm2 mm x mm mm LxB LxW H 60 5.0 1 ( 200) 60 5.0 1 ( 200) Grad deg. pF nA CCE ICEO Semiconductor Group 3 SFH 320 SFH 320 FA Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Description Symbol Symbol SFH 320/FA Fotostrom, = 950 nm Photocurrent Ee = 0.1 mW/cm2, VCE = 5 V SFH 320: Ev = 1000 Ix, Normlicht/standard light A, VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k -2 Wert Value -3 -4 Einheit Unit IPCE IPCE t r, t f 16 16 ... 32 420 25 ... 50 650 7 40 1000 8 A A s 7 6 Kollektor-EmitterVCEsat Sattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3, Ee = 0.1 mW/cm2 1) 1) 150 150 150 150 mV IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe IPCEmin is the min. photocurrent of the specified group Directional characteristics Srel = f () Semiconductor Group 4 SFH 320 SFH 320 FA Relative spectral sensitivity, SFH 320 Srel = f () Relative spectral sensitivity, SFH 320 FA Srel = f () Photocurrent IPCE = f (Ee), VCE = 5 V Total power dissipation Ptot = f (TA) Photocurrent IPCE = f (VCE), Ee = Parameter Dark current ICEO = f (VCE), E = 0 Dark current ICEO = f (TA), VCE = 5 V, E = 0 Capacitance CCE = f (VCE), f = 1 MHz, E = 0 Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V Semiconductor Group 5 |
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